PART |
Description |
Maker |
BR303 Q68000-A3436 SIEMENSAG-Q68000-A3436 |
SILICON MINIATURE THYRISTOR MOSFET N-CH 500V 30A TO-268 D3
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
STGW30NC60WD STGW30NC60WD07 GW30NC60WD |
STGW30NC60WD N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH IGBT N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH?/a> IGBT N-channel 30A - 600V - TO-247 Ultra fast switching PowerMESH垄芒 IGBT
|
STMicroelectronics
|
RJH60T04DPQA1 |
600V - 30A - IGBT
|
Renesas Electronics Corporation
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
ISL9R3060G2 |
30A 600V Stealth Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
P2H30F6 |
FRD MODULE 30A/600V
|
NIEC[Nihon Inter Electronics Corporation]
|
30KRC60 |
30KRC60 THYRISTOR - 30A, 600V, TO-247
|
Nihon Inter Electronics Corporation
|
S30VTA60 |
3 Phase Bridge Diode(600V 30A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
RHRP3040 RHRP3060 |
30A/ 400V - 600V Hyperfast Diodes 30A 400V - 600V Hyperfast Diodes 30A, 400V - 600V Hyperfast Diodes
|
FAIRCHILD[Fairchild Semiconductor]
|
RURP3060 FN2776 |
From old datasheet system 30A, 600V Ultrafast Diode
|
INTERSIL[Intersil Corporation]
|